Electronic structure and the minimum conductance of a graphene layer on SiO2 from density-functional methods.
arXiv:cond-mat/0703094 · doi:10.1088/0953-8984/19/38/386228
Abstract
The effect of the SiO substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using density-functional methods for several model substrates. This provides an estimate of the substrate-charge effects on the behaviour of the bands near , as well as a variation of the equilibrium distance of the graphene sheet. A model of a wavy graphene layer is examined as a possible candidate for understanding the nature of the minimally conducting states in graphene.
arXiv comment6 pages, 5 figures
References in corpus (14)
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Electronic Properties of Disordered Two-Dimensional Carbon
- Quantum Hall Ferromagnetism in Graphene
- Local defects and ferromagnetism in graphene layers
- Coulomb Interactions and Ferromagnetism in Pure and Doped Graphene
- Robust Transport Properties in Graphene
- Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
- Microscopic model of superconductivity in carbon nanotubes
- Optical properties of structurally-relaxed Si/SiO superlattices: the role of bonding at interfaces
- Spin and temperature dependent study of exchange and correlation in thick two-dimensional electron layers
- The ground state of clean and defected graphene: Coulomb interactions of massless Dirac fermions, pair-distribution functions and spin-polarized phases
- Superconductivity in carbon nanotubes coupled to transition metal atoms
- Coulomb interactions of massless Dirac fermions in graphene; pair-distribution functions and exchange-driven spin-polarized phases