Electronic structure and the minimum conductance of a graphene layer on SiO2 from density-functional methods.

Abstract

The effect of the SiO${}_2$ substrate on a graphene film is investigated using realistic but computationally convenient energy-optimized models of the substrate supporting a layer of graphene. The electronic bands are calculated using density-functional methods for several model substrates. This provides an estimate of the substrate-charge effects on the behaviour of the bands near $E_F$, as well as a variation of the equilibrium distance of the graphene sheet. A model of a wavy graphene layer is examined as a possible candidate for understanding the nature of the minimally conducting states in graphene.

6 pages, 5 figures

References in corpus (4)

• Quantum Hall Ferromagnetism in Graphene
• Robust Transport Properties in Graphene
• The ground state of clean and defected graphene: Coulomb interactions of massless Dirac fermions, pair-distribution functions and spin-polarized phases
• Coulomb interactions of massless Dirac fermions in graphene; pair-distribution functions and exchange-driven spin-polarized phases

Cited by in corpus (2)

• The electronic properties of graphene
• Magnetism and structure at a vacancy in graphene