Interminiband Rabi oscillations in biased semiconductor superlattices
arXiv:cond-mat/0702227 · doi:10.1103/PhysRevB.75.165421
Abstract
Carrier dynamics at energy level anticrossings in biased semiconductor superlattices, was studied in the time domain by solving the time-dependent Schroedinger equation. The resonant nature of interminiband Rabi oscillations has been explicitly demonstrated to arise from interference of intrawell and Bloch oscillations. We also report a simulation of direct Rabi oscillations across three minibands, in the high field regime, due to interaction between three strongly coupled minibands.
13 pages, 16 figures