Doped Mott insulator as the origin of heavy Fermion behavior in LiV2O4

Abstract

We investigate the electronic structure of LiV2O4, for which heavy fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a1g band is a lightly doped Mott insulator which -at low temperatures- shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiment by Shimoyamada et al. [Phys. Rev. Lett. 96 026403 (2006)].

4 pages, 5 figures

References in corpus (5)

• Dynamical vertex approximation - a step beyond dynamical mean field theory
• Orbital-selective Mott-Hubbard transition in the two-band Hubbard model
• Quantum Monte Carlo study for multiorbital systems with preserved spin and orbital rotational symmetries
• Projective Quantum Monte Carlo Method for the Anderson Impurity Model and its Application to Dynamical Mean Field Theory
• Fate of Quasiparticle at Mott Transition and Interplay with Lifshitz Transition Studied by Correlator Projection Method

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