Self-Organized Formation of Fractal and Regular Pores in Semiconductors
arXiv:cond-mat/0701008 · doi:10.1007/978-3-662-07969-0_7
Abstract
Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.
6 pages, 10 figures (reduced resolution)