Geometry-induced smoothing of van Hove singularities in capped carbon nanotubes
arXiv:cond-mat/0612595 · doi:10.1209/0295-5075/78/47002
Abstract
The electronic states of capped semi-infinite nanotubes are studied within the phenomenological gauge field-theory model. A single manifold for the description of both the nanotube and the cap region (considered as nearly a half of either Ih or I fullerene) is suggested. The wavefunctions and the density of states (DoS) are numerically calculated for both metallic and semiconducting nanotubes. The smoothing of van Hove singularities is found and proven analytically. The comparison with the experimental observations is discussed.
arXiv comment6 pages, 3 figures, PACS: 73.22.-f, 71.20.Tx, 73.22.Dj
References in corpus (7)
- Size, Shape and Low Energy Electronic Structure of Carbon Nanotubes
- Electronic Density of States of Atomically Resolved Single-Walled Carbon Nanotubes: Van Hove Singularities and End States
- The Electronic Spectrum of Fullerenes from the Dirac Equation
- Electronic properties of curved graphene sheets
- Spectroscopic Properties and STM Images of Carbon Nanotubes
- The continuum gauge field-theory model for low-energy electronic states of icosahedral fullerenes
- Gauge theory of disclinations on fluctuating elastic surfaces