Oscillating Nernst-Ettingshausen effect in Bismuth across the quantum limit
arXiv:cond-mat/0612112 · doi:10.1103/PhysRevLett.98.166602
Abstract
In elemental Bismuth, 10 atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the non-oscillating background. When the first Landau level attains the Fermi Energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. A qualitative agreement with a theory invoking current-carrying edge excitations is observed.
Final published version
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Cited by in corpus (7)
- The Nernst effect and the boundaries of the Fermi liquid picture
- Signatures of Electron Fractionalization in Ultraquantum Bismuth
- Collective cyclotron motion of the relativistic plasma in graphene
- Spin Nernst effect and Nernst effect in two-dimensional electron systems
- Transport anomalies across the quantum limit in semimetallic BiSb
- Origin of the peaks in the Nernst coefficient of bismuth in strong magnetic fields
- Quantum Nernst Effect in a Bismuth Single Crystal