Structural, magnetic, and transport properties of CoFeSi Heusler films
arXiv:cond-mat/0612073 · doi:10.1088/0022-3727/40/6/S06
Abstract
We report the deposition of thin CoFeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2 ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on AlO(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 at low temperatures. The temperature dependence of the resistivity exhibits a crossover from a T^3.5 law at T<50K to a T^1.65 behaviour at elevated temperatures. shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
10 pages, 9 figures to be published in J. Phys. D: Appl. Phys