Structural, magnetic, and transport properties of CoFeSi Heusler films
arXiv:cond-mat/0612073 · doi:10.1088/0022-3727/40/6/S06
Abstract
We report the deposition of thin CoFeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2 ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on AlO(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 at low temperatures. The temperature dependence of the resistivity exhibits a crossover from a T^3.5 law at T<50K to a T^1.65 behaviour at elevated temperatures. shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
arXiv comment10 pages, 9 figures to be published in J. Phys. D: Appl. Phys
References in corpus (7)
- Slater-Pauling Behavior of the Half-Ferromagnetic Full-Heusler Alloys
- Geometric, electronic, and magnetic structure of CoFeSi: Curie temperature and magnetic moment measurements and calculations
- Investigation of CoFeSi: The Heusler compound with Highest Curie Temperature and Magnetic Moment
- Slater-Pauling Rule and Curie-Temperature of Co-based Heusler compounds
- Epitaxial film growth and magnetic properties of Co_2FeSi
- Huge quadratic magneto-optical Kerr effect and magnetization reversal in the CoFeSi Heusler compound
- Unconventional one-magnon scattering resistivity in half metals