Growth and Characterization of BiSrCuO Single Crystals
arXiv:cond-mat/0611349 · doi:10.1016/j.jcrysgro.2007.02.043
Abstract
High-quality BiSrCuO(0x0.5) single crystals have been grown successfully using the travelling-solvent floating-zone(TSFZ) technique. The samples with 0.05 are in the underdoped level. The structure of these crystals was investigated by X-ray diffraction. The evolution of c-axis lattice parameters with varied \emph{x} is displayed, which is strongly associated with the behavior of . The crystals exhibit superconducting transitions with to 0.8 K for the samples with to 0.20, while for samples with and above no superconductivity was discovered down to 1.6 K. The resistivity of samples with =0.31, 0.40 and 0.50 exhibits a drastic divergence as temperature approaches 0 K.
6 pages,7 figures. submitted to Journal of Crystal Growth
References in corpus (1)
Cited by in corpus (6)
- Spin-stripe density varies linearly with hole content in single-layer Bi2201 cuprate
- Growth, characterization and physical properties of high-quality large single crystals of BiSrLaCuO high-temperature superconductors
- Growth and post-annealing studies of La-Bi2201 single crystals
- Chirality-Controlled Enantiopure Crystal Growth of a Transition Metal Monosilicide by a Floating Zone Method
- Planckian Dissipation and non-Ginzburg-Landau Type Upper Critical Field in Bi2201
- Magnetic phase diagram of the layered superconductor Bi{2+x}Sr{2-x}CuO{6+δ} (Bi2201) with Tc~7 K