Gate voltage effects in capacitively coupled quantum dots
arXiv:cond-mat/0611219 · doi:10.1209/epl/i2006-10219-1
Abstract
We study a system of two symmetrical capacitively coupled quantum dots, each coupled to its own metallic lead, focusing on its evolution as a function of the gate voltage applied to each dot. Using the numerical renormalization group and poor man's scaling techniques, the low-energy Kondo scale of the model is shown to vary significantly with the gate voltage, being exponentially small when spin and pseudospin degrees of freedom dominate; but increasing to much larger values when the gate voltage is tuned close to the edges of the Coulomb blockade staircase where low-energy charge-fluctuations also enter, leading thereby to correlated electron physics on energy/temperature scales more accessible to experiment. This range of behaviour is also shown to be manifest strongly in single-particle dynamics and electron transport through each dot.
8 pages, 3 figures
References in corpus (8)
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- Analysis of low energy response and possible emergent SU(4) Kondo state in a double quantum dot
- Conditions for observing emergent SU(4) symmetry in a double quantum dot
- Restoring the SU(4) Kondo regime in a double quantum dot system
- Spin-orbital and spin Kondo effects in parallel coupled quantum dots
- A local moment approach to the degenerate Anderson impurity model
- Thermoelectric properties of a double quantum dot out of equilibrium in Kondo and intermediate valence regimes
- Capacitive interactions and Kondo effect tuning in double quantum impurity systems
- Universal conductance enhancement and reduction of the two-orbital Kondo effect