Influence of Disorder on the Hall Effect in BiSrCuO
arXiv:cond-mat/0611184 · doi:10.1103/PhysRevB.75.092502
Abstract
The in-plane resistivity and Hall coefficient have been measured for the single-layer compound BiSrCuO for the whole range of doping states. The deviation of the Hall coefficient, , from a high-temperature linear behavior and the temperature dependence of the Hall angle are both only weakly dependent upon doping, contrasting with BiSrLaCuO and BiSrCaCuO. This is in contradiction with former proposals that the transverse transport detects the formation of incoherent Cooper pairs in the pseudogap state. Conversely, the analysis of the data using a phenomenological angular dependent scattering rate clearly allows to distinguish between underdoped and overdoped states, and we propose that the maximum in simply arises due to the combination of a large isotropic scattering rate and an anisotropic temperature dependent one.
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