Influence of Disorder on the Hall Effect in Bi$_2$Sr$_2$CuO$_{6+δ}$

L. Fruchter; H. Raffy; F. Bouquet; Z. Z. Li

doi:10.1103/PhysRevB.75.092502

paper

Influence of Disorder on the Hall Effect in Bi $_{2}$ Sr $_{2}$ CuO $_{6 + δ}$

arXiv:cond-mat/0611184 · doi:10.1103/PhysRevB.75.092502

Abstract

The in-plane resistivity and Hall coefficient have been measured for the single-layer compound Bi $_{2}$ Sr $_{2}$ CuO $_{6 + δ}$ for the whole range of doping states. The deviation of the Hall coefficient, $R_{H}$ , from a high-temperature linear behavior and the temperature dependence of the Hall angle are both only weakly dependent upon doping, contrasting with Bi $_{2}$ Sr $_{2 - x}$ La $_{x}$ CuO $_{6 + δ}$ and Bi $_{2}$ Sr $_{2}$ CaCuO $_{8 + δ}$ . This is in contradiction with former proposals that the transverse transport detects the formation of incoherent Cooper pairs in the pseudogap state. Conversely, the analysis of the data using a phenomenological angular dependent scattering rate clearly allows to distinguish between underdoped and overdoped states, and we propose that the maximum in $R_{H} (T)$ simply arises due to the combination of a large isotropic scattering rate and an anisotropic temperature dependent one.

Influence of Disorder on the Hall Effect in Bi2​Sr2​CuO6+δ​

Abstract

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Influence of Disorder on the Hall Effect in Bi $_{2}$ Sr $_{2}$ CuO $_{6 + δ}$