Electron-Phonon Interaction in Embedded Semiconductor Nanostructures

Abstract

The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing {\em ab initio} density functional theory. For a spherical InAs quantum dot embedded in GaAs barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons.

References in corpus (2)

• Dephasing in Quantum Dots: Quadratic Coupling to Acoustic Phonons
• Near-field spectra of quantum well excitons with non-Markovian phonon scattering

Cited by in corpus (5)

• Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots
• The role of phonons for exciton and biexciton generation in an optically driven quantum dot
• Microscopic theory of phonon-induced effects on semiconductor quantum dot decay dynamics in cavity QED
• Non-circular semiconductor nanorings of type I and II: Emission kinetics in the exciton Aharonov-Bohm effect
• One-dimensional photonic wire as a single-photon source: Implications of cavity QED to a phonon bath of reduced dimensionality