Metal-Insulator Transition in a System of Superconducting Vortices Caused by a Metallic Gate
arXiv:cond-mat/0609527 · doi:10.1103/PhysRevLett.97.117004
Abstract
We address a recent experiment in which a strong decrease of the resistance of a superconducting film has been observed when a remote unbiased gate was placed above the film. Here we explain the experimental finding as a suppression of the vortex tunneling due to the Orthogonality Catastrophe of the electrons inside the gate. We interpret the change in the resistance of the film as a "metal-insulator" transition in the system of vortices induced by the gate.
arXiv comment4 pages, 3 figures
References in corpus (4)
- Superconductor-Insulator Transition in a Capacitively Coupled Dissipative Environment
- Dissipation in ultra-thin current-carrying superconducting bridges; evidence for quantum tunneling of Pearl vortices
- The Superconductor-Insulator Transition in a Tunable Dissipative Environment
- Anderson Orthogonality Catastrophe in Disordered Systems
Cited by in corpus (6)
- Superfluid-insulator transition in Fermi-Bose mixtures and the orthogonality catastrophe
- Tuning vortex fluctuations and the resistive transition in superconducting films with a thin overlayer
- Investigating superconductor-insulator transition in thin films using drag resistance:Theoretical analysis of a proposed experiment
- Theoretical Analysis of Drag Resistance in Amorphous Thin Films Exhibiting Superconductor-Insulator-Transition
- Suppression of Tunneling of Superconducting Vortices Caused by a Remote Gate: Example of an Extended Object Tunneling
- On a Second Critical Point in the First Order Metal - Insulator Transitions