Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots
arXiv:cond-mat/0609350 · doi:10.1063/1.2424435
Abstract
Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index substrates [11k], where k = 1,2,3 and are compared with [001]. We find that the QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case.
Submitted to Appl. Phys. Lett