THz parametric gain in semiconductor superlattices in the absence of electric domains

Abstract

We theoretically show that conditions for THz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without formation of electric domains and corruption from pump harmonics.

4 pages, 3 figures. Accepted to Appl. Phys. Lett

References in corpus (1)

• High-frequency absorption and gain in superlattices: Semiquasistatic approach

Cited by in corpus (5)

• Terahertz Bloch oscillator with a modulated bias
• Bloch gain in dc-ac-driven semiconductor superlattices in the absence of electric domains
• Theory of parametric amplification in in superlattices
• Nondegenerate parametric amplification in superlattice and the limits of strong and weak dissipation
• Theoretical backgrounds of nonlinear THz spectroscopy of semiconductor superlattices