A widely tunable few electron droplet
arXiv:cond-mat/0607248 · doi:10.1088/0953-8984/19/23/236202
Abstract
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads Kondo phenomena are observed as a function of a magnetic field. By varying gate voltages the electron droplet can, in addition, be distorted into a double quantum dot with a strong interdot tunnel coupling while keeping track of the number of trapped electrons.
11 pages, 5 figures
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