Temperature dependent electronic correlation effects in GdN

Abstract

We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse photoemission spectroscopy (ARIPS) of the conduction bands of GdN. A redshift of 0.34 eV of the lower band edge (T=$T_c$ $\to$ T=0) is obtained and found in close comparison with earlier theoretical prediction and experimental value reported in the literature.

13 pages, 8 figures, accepted for publication in Journal of Physics: Condensed Matter

References in corpus (2)

• Strain induced half-metal to semiconductor transition in GdN
• Correlation effects in the valence bands of ferromagnetic semiconductor EuS

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• Low-energy properties of the Kondo lattice model
• Modeling huge photoinduced spin polarons in intrinsic magnetic semiconductors
• Ferromagnetism in multi-band Kondo lattice model
• Spin-polarized tunneling currents through a ferromagnetic insulator between two metallic or superconducting leads
• Monte Carlo simulations and critical behavior of the Rare Earth Based Alloy GdN