A single intrinsic Josephson junction with double-sided fabrication technique

Abstract

We make stacks of intrinsic Josephson junctions (IJJs) imbedded in the bulk of very thin ($d\le 100$~nm) $\mathrm{B}{\mathrm{i}}_2\mathrm{S}{\mathrm{r}}_2\mathrm{CaC}{\mathrm{u}}_2{\mathrm{O}}_{8+\mathrm{x}}$ single crystals. By precisely controlling the etching depth during the double-sided fabrication process, the stacks can be reproducibly tailor-made to be of any microscopic height ($0-9\mathrm{nm}<d$), i.e. enclosing a specified number of IJJ (0-6), including the important case of a single junction. We discuss reproducible gap-like features in the current-voltage characteristics of the samples at high bias.

3 pages, 4 figures, to be published in APL May. 29

References in corpus (1)

• Inhomogeneity Induces Resonance Coherence Peaks in Superconducting BSCCO

Cited by in corpus (2)

• Temperature dependence of the bulk energy gap in underdoped Bi-2212: Evidence for the mean-field superconducting transition
• Theory of Macroscopic Quantum Tunneling in High-T_c c-Axis Josephson Junctions