Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons

Abstract

We calculate the P-shell--to-S-shell decay lifetime τ(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of τ(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes τ(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.

arXiv commentVersion published in Phys. Rev. B

References in corpus (6)

• Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots
• Polarons in semiconductor quantum-dots and their role in the quantum kinetics of carrier relaxation
• Excitons, biexcitons and trions in self-assembled (In,Ga)As/GaAs quantum dots: Recombination energies, polarization and radiative lifetimes versus dot height
• Exciton lifetime in InAs/GaAs quantum dot molecules
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• Pressure effects on neutral and charged excitons in self-assembled InGaAs/GaAs quantum dots

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• Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in (In,Ga)As/GaAs quantum dots
• Prospects for storage and retrieval of a quantum dot single photon in an ultracold ${}^{87}$Rb ensemble
• Polaron relaxation in a quantum dot due to anharmonic coupling within a mean-field approach