Electron energy relaxation by phonons in the Kondo condensate

Abstract

We have used normal metal-insulator-superconductor tunnel junctions as thermometers at sub-Kelvin temperatures to study the electron-phonon (e-p) interaction in thin Aluminum films doped with Manganese, as a function of Manganese concentration. Mn in Al is known to be a Kondo impurity with extremely high Kondo temperature $T_K\sim$ 500 K, thus our results probe the e-p coupling in the fully spin compensated, unitary limit. The temperature dependence of the e-p interaction is consistent with the existing theory for disordered metals, however full theory including the Kondo effect has not been worked out yet. The strength of the interaction decreases with increasing Manganese concentration, providing a means to improve sensitivity of detectors and efficiency of solid state coolers.

References in corpus (1)

• Observation of disorder-induced weakening of electron-phonon interaction in thin noble metal films

Cited by in corpus (6)

• Rectification of electronic heat current by a hybrid thermal diode
• A normal metal tunnel-junction heat diode
• Influence of Phonon dimensionality on Electron Energy Relaxation
• Electronic heat current rectification in hybrid superconducting devices
• Thermal superconducting quantum interference proximity transistor
• Extremely weak sub-kelvin electron-phonon coupling in InAs On Insulator