A one-dimensional model for the growth of CdTe quantum dots on Si substrates

Abstract

Recent experiments involving CdTe films grown on Si(111) substrates by hot wall epitaxy revealed features not previously observed [S. O. Ferreira \textit{et al.}, J. Appl. Phys. \textbf{93}, 1195 (2003)]. This system, which follows the Volmer-Weber growth mode with nucleation of isolated 3D islands for less than one monolayer of evaporated material, was described by a peculiar behavior of the quantum dot (QD) size distributions. In this work, we proposed a kinetic deposition model to reproduce these new features. The model, which includes thermally activated diffusion and evaporation of CdTe, qualitatively reproduced the experimental QD size distributions. Moreover, the model predicts a transition from Stranski-Krastanow growth mode at lower temperatures to Volmer-Weber growth mode at higher ones characterized through the QD width distributions.

arXiv commentto appear in Physics Letters A

References in corpus (3)

• The effect of monomer evaporation on a simple model of submonolayer growth
• Growth of three-dimensional structures by atomic deposition on surfaces containing defects : simulations and theory
• Ehrlich-Schwoebel barrier controlled slope selection in epitaxial growth

Cited by in corpus (6)

• Representations of the Schrödinger-Virasoro algebras
• The derivation algebra and automorphism group of the twisted Schrödinger-Virasoro algebra
• Island coarsening in one-dimensional models with partially and completely reversible aggregation
• Classification of Irreducible Weight Modules with a Finite-dimensional Weight Space over the Twisted Schrödinger-Virasoro Lie algebra
• 2-Cocycles of Deformative Schrödinger-Virasoro Algebras
• Leibniz Central Extension on the Twisted Schrödinger-Virasoro Algebra