Atomistic simulation of light-induced changes in hydrogenated amorphous silicon
arXiv:cond-mat/0510818 · doi:10.1088/0953-8984/18/1/L01
Abstract
We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon to light exposure (Staebler-Wronski effect). We obtain improved microscopic understanding of PV operation, compute the motion of H atoms, and modes of light-induced degradation of photovoltaics. We clarify existing models of light-induced change in aSi:H and show that the Hydrogen collision model of Branz3 is correct in essentials.
10 pages, 3 figures, to be published in J. Phys. Cond matt. (Letter)