Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study
arXiv:cond-mat/0510263 · doi:10.1002/pssb.200460056
Abstract
We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism.
arXiv comment6 pages, 4 figures
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- Spin Chains and Electron Transfer at Stepped Silicon Surfaces
- M-atom conductance oscillations of a metallic quantum wire
- Pb chains on reconstructed Si(335) surface
- Electron transport across a quantum wire in the presence of electron leakage to a substrate
- Thermoelectric effects in STM tunneling through a monoatomic chain
- First principles study of Si(335)-Au surface
- High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(111)-(6x6) substrate
- Discontinuous conductance of bichromatically ac-gated quantum wires
- Electron transport through a strongly correlated monoatomic chain
- STM tunneling through a quantum wire with a side-attached impurity
- Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study