Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire
arXiv:cond-mat/0509375
Abstract
This work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, , and is also increased by about 23% over that associated with temperature of 500 K.
6 pages including 2 figures