Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance
arXiv:cond-mat/0508500 · doi:10.1103/PhysRevLett.96.086803
Abstract
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
4 pages, 1 figure
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