Screening of point charges in Si quantum dots
arXiv:cond-mat/0508382 · doi:10.1103/PhysRevB.72.165311
Abstract
The screening of point charges in hydrogenated Si quantum dots ranging in diameter from 10 A to 26 A has been studied using first-principles density-functional methods. We find that the main contribution to the screening function originates from the electrostatic field set up by the polarization charges at the surface of the nanocrystals. This contribution is well described by a classical electrostatics model of dielectric screening.
Cited by in corpus (6)
- Screening in semiconductor nanocrystals: \textit{Ab initio} results and Thomas-Fermi theory
- Tight binding formulation of the dielectric response in semiconductor nanocrystals
- Acceptor and donor impurities in GaN nanocrystals
- Electron correlations and silicon nanocluster energetics
- Polarization anisotropy in the optical properties of silicon ellipsoids
- Inter- and intra-band Coulomb interactions between holes in silicon nanostructures