Semiconductor charge qubit relaxation due to two-phonon processes

Abstract

We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots, the strength of quantum dot confinement, and the lattice temperature. Enhancement of the rates by specific inter-dot distances and lattice temperatures, and the relative strength of different scattering channels are discussed. Our results show that although at low temperatures ($T\sim 1$ K) two-phonon processes are almost four orders of magnitude weaker compared to one-phonon processes in relaxing electron orbital states, at room temperature they are as important as one-phonon processes.

Submitted to PRB

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• Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots
• Suppression of electron relaxation and dephasing rates in quantum dots caused by external magnetic fields
• Phonon-induced relaxation of a two-state system in solids
• Spin Hot Spots in Single-Electron GaAs-based Quantum Dots