Valence transition behavior of the doped Falicov-Kimball model at nonzero temperatures

Abstract

The extrapolation of small-cluster exact-diagonalization calculations is used to study the influence of doping on valence transitions in the spinless Falicov-Kimball model at nonzero temperatures. Two types of doping are examined, and namely, the substitution of rare-earth ions by non-magnetic ions that introduce (i) one or (ii) none additional electron (per non-magnetic ion) into the conduction band. It is found that the first type of substitution increases the average $f$-state occupancy of rare-earth ions, whereas the second type of substitution has the opposite effect. The results obtained are used to describe valence transition behavior of samarium in the hexaboride solid solutions $S{m}_{1-x}{M}_x{B}_6$ ($M=Y^{3+},L{a}^{3+},S{r}^{2+},Y{b}^{2+}$) and a very good agreement of theoretical and experimental results is found.

LaTex, 9 pages, 5 figures

References in corpus (3)

• Exact solution of the Falicov-Kimball model with dynamical mean-field theory
• Raman scattering through a metal-insulator transition
• The spectral properties of the Falicov-Kimball model in the weak-coupling limit

Cited by in corpus (2)

• Formation of charge and spin ordering in strongly correlated electron systems
• Excitonic Insulator and the Extended Falicov--Kimball Model Away from Half-Filling