Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires

Abstract

The statistical properties of the conductance of one dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G) in different regimes of V, T within a statistical model of resonant tunneling transmission. We find that P(G) changes from the well-known log-normal distribution at T=0 in the linear response regime to a Gaussian distribution at large V, T. The dependence on T and V of average quantities such as < G >, < ln G > is analyzed as well. Our analytical results are confirmed by numerical simulations. We also discuss the limits of validity of the model and conclude that the effects of finite T, V presented here should be observable.

7 pages, 4 figures. To appear in Europhysics Letters

References in corpus (4)

• Random-Matrix Theory of Quantum Transport
• High-Field, Quasi-Ballistic Transport in Short Carbon Nanotubes
• Conductance distribution in quasi-one-dimensional disordered quantum wires
• Coherent "metallic" resistance and medium localisation in a disordered 1D insulator

Cited by in corpus (3)

• Controlling conductance statistics of quantum wires by driving ac fields
• Conductance of a quantum dot in the Kondo regime connected to dirty wires
• Conductance distributions of 1D-disordered wires at finite temperature and bias voltage