Angular magnetoresistance oscillations in bilayers in tilted magnetic fields

Abstract

Angular magnetoresistance oscillations (AMRO) were originally discovered in organic conductors and then found in many other layered metals. It should be possible to observe AMRO to semiconducting bilayers as well. Here we present an intuitive geometrical interpretation of AMRO as the Aharonov-Bohm interference effect, both in real and momentum spaces, for balanced and imbalanced bilayers. Applications to the experiments with bilayers in tilted magnetic fields in the metallic state are discussed. We speculate that AMRO may be also observed when each layer of the bilayer is in the composite-fermion state.

4 pages, 5 figures, Proceedings of EP2DS-16. V.2: figures corrected, one reference added. V3: one reference added

References in corpus (3)

• Onset of Interlayer Phase Coherence in a Bilayer Two-Dimensional Electron System: Effect of Layer Density Imbalance
• Interlayer Aharonov-Bohm interference in tilted magnetic fields in quasi-one-dimensional layered conductors
• Commensurate-incommensurate transitions of quantum Hall stripe states in double-quantum-well systems

Cited by in corpus (10)

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• Modelling the angle-dependent magnetoresistance oscillations of Fermi surfaces with hexagonal symmetry
• Effects of a tilted magnetic field in a Dirac double layer
• Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
• Fermi surface properties of the bifunctional organic metal $\kappa$-(BETS)${}_2$Mn[N(CN)${}_2$]${}_3$ near the metal--insulator transition
• Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields
• Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure