Statistics of charge transfer in a tunnel junction coupled to an oscillator

Abstract

The charge transfer statistics of a tunnel junction coupled to a quantum object is studied using the charge projection technique. The joint dynamics of the quantum object and the number of charges transferred through the junction is described by the charge specific density matrix. The method allows evaluating the joint probability distribution of the state of the quantum object and the charge state of the junction.The statistical properties of the junction current are derived from the charge transfer statistics using the master equation for the charge specific density matrix. The theory is applied to a nanoelectromechanical system, and the influence on the average current and the current noise of the junction is obtained for coupling to a harmonic oscillator.

18 pages, 3 figures

References in corpus (16)

• Towards quantum superpositions of a mirror
• Scattering approach to parametric pumping
• Ultrasensitive nanoelectromechanical mass detection
• Phonon effects in molecular transistors: Quantum and classical treatment
• Entanglement and decoherence of a micromechanical resonator via coupling to a Cooper box
• A nanomechanical resonator shuttling single electrons at radio frequencies
• Classical dynamics of a nano-mechanical resonator coupled to a single-electron transistor
• Measurement induced quantum-classical transition
• Evidence for Quantized Displacement in Macroscopic Nanomechanical Oscillators
• Superconducting Qubits Coupled to Nanoelectromechanical Resonators: An Architecture for Solid-State Quantum Information Processing
• Charge transfer counting statistics revisited
• Current noise of a single-electron transistor coupled to a nano-mechanical resonator
• Shot Noise of a Tunnel Junction Displacement Detector
• Quantum Pumping in the Magnetic Field: Role of Discrete Symmetries
• Nonequilibrium Fluctuations and Decoherence in Nanomechanical Devices Coupled to the Tunnel Junction
• Quantum measurement in the charge representation

Cited by in corpus (24)

• Nonequilibrium fluctuations, fluctuation theorems, and counting statistics in quantum systems
• Molecular Transport Junctions: Vibrational Effects
• Counting statistics of transport through Coulomb blockade nanostructures: High-order cumulants and non-Markovian effects
• Inelastic tunneling effects on noise properties of molecular junctions
• Fluctuation theorem for counting-statistics in electron transport through quantum junctions
• Interference effects in the counting statistics of electron transfers through a double quantum dot
• Quantum master equation descriptions of a nanomechanical resonator coupled to a single-electron transistor
• Quantum Noise in the Electromechanical Shuttle
• Dynamical instabilities of a resonator driven by a superconducting single-electron transistor
• Non-Markovian dynamics of a nanomechanical resonator measured by a quantum point contact
• Single-electron counting spectroscopy: simulation study of porphyrin in a molecular junction
• Quantum transport in a resonant tunnel junction coupled to a nanomechanical oscillator
• Time-dependent quantum transport in a resonant tunnel junction coupled to a nanomechanical oscillator
• Bistability and Displacement Fluctuations in a Quantum Nano-mechanical Oscillator
• Improved position measurement of nano electromechanical systems using cross correlations
• Spin Lifetimes in Quantum Dots from Noise Measurements
• Noise spectrum of a tunnel junction coupled to a nanomechanical oscillator
• Measuring the Momentum of a Nanomechanical Oscillator through the Use of Two Tunnel Junctions
• Full counting statistics and conditional evolution in a nanoelectromechanical system
• Non-Markovian dynamics and noise characteristics in continuous measurement of a solid-state charge qubit
• Non-Markovian theory for the waiting time distributions of single electron transfers
• Momentum and position detection in nanoelectromechanical systems beyond Born and Markov approximations
• Noise in an SSET-resonator driven by an external field
• The effect of noise fluctuation of a quantum tunneling device coupled to a substrate