Tunneling resonances in quantum dots: Coulomb interaction modifies the width

Abstract

Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-life-time broadening of the quantum dot states and a quantitative comparison of the experimental data with a non-equilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction.

4 pages, 4 figures