Comment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers''

Abstract

In a recent Letter, Murzin et. al. [Phys. Rev. Lett., vol. 92, 016802 (2004)] investigated "instanton effects" in the magneto resistance data taken from samples with heavily Si-doped GaAs layers at low temperatures. This topological issue originally arose in the development of a microscopic theory of quantum Hall effect some 20 years ago. The investigations by Murzin et. al., however, do not convey the correct ideas on scaling that have emerged over the years in the general theory of quantum transport.

arXiv commentcomment on Phys. Rev. Lett., vol. 92, 016802 (2004)

References in corpus (3)

• Modular invariance, universality and crossover in the quantum Hall effect
• Establishing a non-Fermi liquid theory for disordered metals near two dimensions
• Topological oscillations of the magnetoconductance in disordered GaAs layers

Cited by in corpus (5)

• Rings and boxes in dissipative environments
• The problem of "macroscopic charge quantization" in single-electron devices
• From insulator to quantum Hall liquid at low magnetic fields
• Rings and Coulomb boxes in dissipative environments
• Reply to Comment on "Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers"