Evolution of the density of states at EF of Bi2-yPbySr2-xLaxCuO6+d and Bi2Sr2-xLaxCuO6+d cuprates with hole doping
arXiv:cond-mat/0504590 · doi:10.1103/PhysRevB.72.014504
Abstract
Bi2Sr2-xLaxCuO6+d and Bi2-yPbySr2-xLaxCuO6+d high-Tc superconductors in a wide doping range from overdoped to heavily underdoped were studied by X-ray absorption and photo-emission spectroscopy. The hole concentration p was determined by an analysis of the Cu L3-absorption edge. Besides the occupied density of states derived from photoemission, the un-occupied density of states was determined from the prepeak of the O K-absorption edge. Both, the occupied as well as the unoccupied density of states reveal the same dependence on hole doping, i.e. a continuous increase with increasing doping in the hole underdoped region and a constant density in the hole overdoped region. By comparing these results of single-layer BSLCO with previous results on single-layer LSCO it could be argued that besides the localized holes on Cu sites the CuO2-planes consist of two types of doped holes, from which the so-called mobile holes determine the intensity of the prepeak of the O 1s absorption edge.
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- Doping-Dependent Raman Resonance in the Model High-Temperature Superconductor HgBa2CuO4+d
- Microwave conductivity and superfluid density in strongly overdoped Tl2201
- Doping evolution of Zhang-Rice singlet spectral weight: a comprehensive examination by x-ray absorption spectroscopy
- Bulk Fermi surface and momentum density in heavily doped LaSrCuO using high resolution Compton scattering and positron annihilation spectroscopies
- Electronic character of charge order in square planar low valence nickelates
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