Coherent transport in homojunction between excitonic insulator and semimetal

Abstract

From the solution of a two-band model, we predict that the thermal and electrical transport across the junction of a semimetal and an excitonic insulator will exhibit high resistance behavior and low entropy production at low temperatures, distinct from a junction of a semimetal and a normal semiconductor. This phenomenon, ascribed to the dissipationless exciton flow which dominates over the charge transport, is based on the much longer length scale of the change of the effective interface potential for electron scattering due to the coherence of the condensate than in the normal state.

arXiv commentRevTeX 4.0, 13 pages, 5 b/w figures, 1 colour figure, 1 table. Version modified with respect to the original, which will appear in Physical Review Letters. This version includes the supplementary (EPAPS) material as an Appendix, and it is slightly longer than the accepted version (more text and references)

References in corpus (2)

• Ghost excitonic insulator transition in layered graphite
• Character of electron reflection at a normal metal-Peierls semiconductor boundary

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