On the low-field insulator-quantum Hall conductor transitions

Abstract

We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $\nu =4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $\nu =4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.

Our experimental results are inconsistent with Huckestein's argument [PRL 84, 3141 (2000)]

References in corpus (7)

• Possible Metal/Insulator Transition at B=0 in Two Dimensions
• Disappearance of integer quantum Hall effect
• Weak Field Phase Diagram for an Integer Quantum Hall Liquid
• Quantum Hall effect at low magnetic fields
• Semicircle: An exact relation in the Integer and Fractional Quantum Hall Effect
• Phase diagram of the integer quantum Hall effect in p-type Germanium
• "Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

Cited by in corpus (6)

• From semiclassical transport to quantum Hall effect under low-field Landau quantization
• From insulator to quantum Hall liquid at low magnetic fields
• Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system
• Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene
• Probing onset of strong localization and electron-electron interactions with the presence of direct insulator-quantum Hall transition
• Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields