Kondo Effect in Multiple-Dot Systems
arXiv:cond-mat/0502413 · doi:10.1103/PhysRevB.72.085303
Abstract
We study the Kondo effect in multiple-dot systems for which the inter- as well as intra-dot Coulomb repulsions are strong, and the inter-dot tunneling is small. The application of the Ward-Takahashi identity to the inter-dot dynamical susceptibility enables us to analytically calculate the conductance for a double-dot system by using the Bethe-ansatz exact solution of the SU(4) impurity Anderson model. It is clarified how the inter-dot Kondo effect enhances or suppresses the conductance under the control of the gate voltage and the magnetic field. We then extend our analysis to multiple-dot systems including more than two dots, and discuss their characteristic transport properties by taking a triple-dot system as an example.
8 pages, 9 figures
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Cited by in corpus (14)
- Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule
- Kondo effect in double quantum dots with inter-dot repulsion
- Kondo effects in a triangular triple quantum dot: NRG study in the whole region of the electron filling
- Tunneling through triple quantum dots with mirror symmetry
- The three dimensionality of triple quantum dot stability diagrams
- Fano Effect through Parallel-coupled Double Coulomb Islands
- Kondo regime in triangular arrangements of quantum dots: Molecular orbitals, interference and contact effects
- Kondo effects in a triangular triple quantum dot with lower symmetries
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- Kondo and Dicke effect in quantum-dots side coupled to a quantum wire
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- Spin-isospin Kondo effects for and baryons and and mesons
- Negative differential conductance induced by electronic correlation in a double quantum-dot molecule
- Three-orbital Kondo effect in single quantum dot system with plural electrons