Simple Estimation of X- Trion Binding Energy in Semiconductor Quantum Wells

Abstract

A simple illustrative wave function with only three variational parameters is suggested to calculate the binding energy of negatively charged excitons (X-) as a function of quantum well width. The results of calculations are in agreement with experimental data for GaAs, CdTe and ZnSe quantum wells, which differ considerably in exciton and trion binding energy. The normalized X- binding energy is found to be nearly independent of electron-to-hole mass ratio for any quantum well heterostructure with conventional parameters. Its dependence on quantum well width follows an universal curve. The curve is described by a simple phenomenological equation.

8 pages, 3 Postscript figures

References in corpus (3)

• Excitons and charged excitons in semiconductor quantum wells
• Binding Energy of Charged Excitons in ZnSe-based Quantum Wells
• Influence of well width fluctuations on the binding energy of excitons, charged excitons and biexcitons in GaAs-based quantum wells

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• Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures
• Magneto-optics of two-dimensional electron gases modified by strong Coulomb interactions in ZnSe quantum wells
• Experimental evidences of trions and Fermi edge singularity in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance spectroscopy
• Low-energy trions in graphene quantum dots