Experimental Electronic Structure and Interband Nesting in BaVS_3

Abstract

The correlated 3d sulphide BaVS_3 is a most interesting compound because of the apparent coexistence of one-dimensional and three-dimensional properties. Our experiments explain this puzzle and shed new light on its electronic structure. High-resolution angle-resolved photoemission measurements in a 4eV wide range below the Fermi level explored the coexistence of weakly correlated a_1g wide-band and strongly correlated e_g narrow-band d-electrons that is responsible for the complicated behavior of this material. The most relevant result is the evidence for a_1g--e_g inter-band nesting condition.

arXiv comment4 pages, 3 figures

References in corpus (4)

• Renormalization of spectral lineshape and dispersion below Tc in Bi2Sr2CaCu2O8+d
• Orbitally Driven Spin Pairing in the 3D Non-Magnetic Mott Insulator BaVS3: Evidence from Single Crystal Studies
• Pressure Induced Quantum Critical Point and Non-Fermi-Liquid Behavior in BaVS3
• Importance of interorbital charge transfers for the metal-to-insulator transition of BaVS${}_3$

Cited by in corpus (3)

• Quantum transport equations for low-dimensional multiband electronic systems. I
• Interplay of electronic correlations and lattice instabilities in BaVS3
• Thermally activated charge carriers and mid-infrared optical excitations in quarter-filled CDW systems