Method to determine defect positions below a metal surface by STM
arXiv:cond-mat/0501751 · doi:10.1103/PhysRevB.71.115430
Abstract
The oscillatory voltage dependence of the conductance of a quantum point contact in the presence of a single point-like defect has been analyzed theoretically. Such signals are detectable and may be exploited to obtain information on defect positions below a metal surface. Both tunnel junctions and ballistic contacts of adiabatic shape have been considered. The effect of quantum interference has been taking into account between the principal wave that is directly transmitted through the contact and the partial wave that is scattered by the contact and the defect. This effect leads to oscillations of the conductance as a function of applied voltage. We obtain the dependence of the period and amplitude of the conductance oscillations on the position of the defect inside the metal.
16 pages, 7 figures
References in corpus (4)
- Conductance fluctuations as a tool for investigating the quantum modes in atomic size metallic contacts
- Effect of quantum interference in the nonlinear conductance of microconstrictions
- Quantum interference structures in the conductance plateaus of gold nanojunctions
- Voltage dependent conductance and shot noise in quantum microconstriction with single defects
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- Conductance of a STM contact on the surface of a thin film
- Influence of structural deformations on the reentrant conductance feature in semiconducting nanowires