Melting temperature of screened Wigner crystal on helium films by molecular dynamics

Abstract

Using molecular dynamics (MD) simulation, we have calculated the melting temperature of two-dimensional electron systems on $240$Å-$500$Åhelium films supported by substrates of dielectric constants ${\epsilon }_s=2.2-11.9$ at areal densities $n$ varying from $3\times 10^9$ cm${}^{-2}$ to $1.3\times 10^{10}$ cm${}^{-2}$. Our results are in good agreement with the available theoretical and experimental results.

arXiv comment4 pages and 4 figures

References in corpus (1)

• Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0