Vibrational Sidebands and Kondo-effect in Molecular Transistors

Abstract

Electron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron-interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias-voltages equal to multiples of the vibron frequency. Due to selection rules, the side-peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.

4 pages

References in corpus (4)

• The Kondo effect in C${}_{60}$ single-molecule transistors
• Inelastic electron tunneling via molecular vibrations in single-molecule transistors
• Many Body Effects on the Transport Properties of Single-Molecule Devices
• Quantum transport through a deformable molecular transistor