Observing the spin-Coulomb drag in spin-valve devices

Abstract

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomplish this separation in a spin-valve device.

11 pages, 5 figures

References in corpus (4)

• Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
• Diffusion equation and spin drag in spin-polarized transport
• Coulomb interaction effects in spin-polarized transport
• Spin Coulomb drag in the two-dimensional electron liquid

Cited by in corpus (8)

• Spin dynamics in semiconductors
• Coulomb drag
• Coulomb drag between two spin incoherent Luttinger liquids
• Ambipolar spin diffusion and D'yakonov-Perel' spin relaxation in GaAs quantum wells
• Coulomb Drag in Altermagnets
• Diffusion and transport of spin pulses in an $n$-type semiconductor quantum well
• Magnetic Switching in Weyl Semimetal-Superconductor Heterostructures
• Physical condition and spin-resolved exchange correlation kernels in an inhomogeneous many electron system