Two Aspects of the Mott-Hubbard Transition in Cr-doped V_2O_3

Abstract

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V${}_2$O${}_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition upon Cr doping. The aim of this sh ort paper is to emphasize two aspects of our recent results: (i) the filling of the Mott-Hubbard gap with increasing temperature, and (ii) the peculiarities of the Mott-Hubbard transition in this system which is not characterized by a diver gence of the effective mass for the $a_{1g}$-orbital.

arXiv comment2 pages, 3 figures, SCES'04 conference proceedings

References in corpus (6)

• Ab initio calculations of quasiparticle band structure in correlated systems: LDA++ approach
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• Landau Theory of the Finite Temperature Mott Transition
• Prominent quasi-particle peak in the photoemission spectrum of the metallic phase of V_2O_3
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Cited by in corpus (1)

• Electronic Structure Calculations with Dynamical Mean-Field Theory: A Spectral Density Functional Approach