Motion of Contact Line of a Crystal Over the Edge of Solid Mask in Epitaxial Lateral Overgrowth
arXiv:cond-mat/0407362 · doi:10.1016/j.commatsci.2004.07.006
Abstract
Mathematical model that allows for direct tracking of the homoepitaxial crystal growth out of the window etched in the solid, pre-deposited layer on the substrate is described. The growth is governed by the normal (to the crystal-vapor interface) flux from the vapor phase and by the interface diffusion. The model accounts for possibly inhomogeneous energy of the mask surface and for strong anisotropies of crystal-vapor interfacial energy and kinetic mobility. Results demonstrate that the motion of the crystal-mask contact line slows down abruptly as radius of curvature of the mask edge approaches zero. Numerical procedure is suggested to overcome difficulties associated with ill-posedness of the evolution problem for the interface with strong energy anisotropy. Keywords: Thin films, epitaxy, MOCVD, surface diffusion, interface dynamics, contact lines, rough surfaces, wetting, regularization of ill-posed evolution problems.
21 pages, 11 figures; to appear in Computational Materials Science