Shot noise in resonant tunneling through an interacting quantum dot with intradot spin-flip scattering
arXiv:cond-mat/0406679 · doi:10.1109/TNANO.2004.840157
Abstract
In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.
Some typos correction. 6 pages, 3 figures, based on work presented at the 2004 IEEE NTC Quantum Device Technology Workshop, accepted for publication by IEEE transactions on Nanotechnology
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- Spin-dependent current noises in transport through coupled quantum dots
- Magnetic-flux-controlled giant Fano factor for the coherent tunneling through a parallel double-quantum-dot
- Effect of uniaxial magnetic anisotropy on charge transport in a junction with a precessing anisotropic molecular spin