ScGaN Alloy Growth by Molecular Beam Epitaxy: Evidence for a Metastable Layered Hexagonal Phase

Abstract

Alloy formation in ScGaN is explored using rf molecular beam epitaxy over the Sc fraction range x = 0-100%. Optical and structural analysis show separate regimes of growth, namely I) wurtzite-like but having local lattice distortions in the vicinity of the ScGa substitutions for small x (x < 0.17), II) a transitional regime for intermediate x, and III) cubic, rocksalt-like for large x (x > 0.54). In regimes I and III, the direct optical transition decreases approximately linearly with increasing x but with an offset over region II. Importantly, it is found that for regime I, an anisotropic lattice expansion occurs with increasing x in which a increases much more than c. These observations support the prediction of Farrer and Bellaiche [Phys. Rev. B 66, 201203-1 (2002)] of a metastable layered hexagonal phase of ScN, denoted h-ScN.

11 pages, 5 figures, submitted to Phys. Rev. B Rapid Comm

References in corpus (1)

• Adatom Diffusion at GaN (0001) and (000bar1) Surfaces

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