Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

Abstract

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

7 pages, Proceedings of ICFSI-9, Madrid, Spain (September 2003), special issue of Applied Surface Science (in press)

References in corpus (2)

• Electronic polarization at surfaces and thin films of organic molecular crystals: PTCDA
• Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level

Cited by in corpus (6)

• Molecular Electronics by Chemical Modification of Semiconductor Surfaces
• First-principles study of the dipole layer formation at metal-organic interfaces
• Site-selective adsorption of naphthalene-tetracarboxylic-dianhydride on Ag(110): First-principles calculations
• Image effects in transport at metal-molecule interfaces
• Interfacial charge transfer in nanoscale polymer transistors
• Can we predict interface dipoles based on molecular properties?