Anisotropy of Resonant Inelastic X-Ray Scattering at the K Edge of Si:Theoretical Analysis
arXiv:cond-mat/0405009 · doi:10.1143/JPSJ.73.3171
Abstract
We investigate theoretically the resonant inelastic x-ray scattering (RIXS) at the edge of Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically varying transfered-momenta, incident-photon energy and incident-photon polarization. We confirm the anisotropy of the experimental spectra by Y. Ma {\it et al}. (Phys. Rev. Lett. 74, 478 (1995)), providing a quantitative explanation of the spectra.
18 pages, 11 figures