Parameters of the Effective Singlet-Triplet Model for Band Structure of High-$T_c$ Cuprates by Different Approaches

Abstract

The present paper covers the problem of parameters determination for High-$T_c$ superconductive copper oxides. Different approaches, {\it ab initio} LDA and LDA+U calculations and Generalized Tight-Binding (GTB) method for strongly correlated electron systems, are used to calculate hopping and exchange parameters of the effective singlet-triplet model for $Cu{O}_2$-layer. The resulting parameters are in remarkably good agreement with each other and with parameters extracted from experiment. This set of parameters is proposed for proper quantitative description of physics of hole doped High-$T_c$ cuprates in the framework of effective models.

PACS 74.72.h; 74.20.z; 74.25.Jb; 31.15.Ar

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Cited by in corpus (3)

• A new hybrid LDA and Generalized Tight-Binding method for the electronic structure calculations of strongly correlated electron systems
• Effect of CuO2 lattice strain on the electronic structure and properties of high-Tc cuprate family
• Comparative study of electron and hole doped High-Tc compounds in pseudogap regime: LDA+DMFT+Sk approach